Si7905DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
D u ty Cycle = 0.5
0.2
0.1
0.1
t 1
t 2
0.01
0.05
0.02
Single Pulse
N otes:
P DM
t 1
t 2
1. D u ty Cycle, D =
2. Per Unit Base = R thJA = 94 °C
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
0.001
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69920 .
www.vishay.com
6
Document Number: 69920
S11-2187-Rev. C, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SI7913DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK
SI7922DN-T1-GE3 MOSFET DL N-CH 100V PPAK 1212-8
SI7923DN-T1-GE3 MOSFET P-CH D-S 30V 1212-8 PPAK
SI7940DP-T1-E3 MOSFET 2N-CH 12V 7.6A 8SOIC
SI7945DP-T1-GE3 MOSFET DL P-CH 30V PPAK 8-SOIC
SI7948DP-T1-GE3 MOSFET N-CH DL 60V PWRPAK 8-SOIC
SI7956DP-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC
SI7958DP-T1-GE3 MOSFET DL N-CH 40V PPAK 8-SOIC
相关代理商/技术参数
SI7905DN-T1-GE3 功能描述:MOSFET 40V 6.0A 20.8W 60mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7906 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7906A 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7908 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7908A 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7909 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7909DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET
SI7909DN-T1-E3 功能描述:MOSFET 12V 7.7A 2.8W 37mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube